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Neutron Imaging with Timepix Coupled Lithium Indium Diselenide

机译:Timepix偶联锂硒化铟的中子成像

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The material lithium indium diselenide, a single crystal neutron sensitive semiconductor, has demonstrated its capabilities as a high resolution imaging device. The sensor was prepared with a 55 μ m pitch array of gold contacts, designed to couple with the Timepix imaging ASIC. The resulting device was tested at the High Flux Isotope Reactor, demonstrating a response to cold neutrons when enriched in 95% 6 Li. The imaging system performed a series of experiments resulting in a 200 μ m resolution limit with the Paul Scherrer Institute (PSI) Siemens star mask and a feature resolution of 34 μ m with a knife-edge test. Furthermore, the system was able to resolve the University of Tennessee logo inscribed into a 3D printed 1 cm 3 plastic block. This technology marks the application of high resolution neutron imaging using a direct readout semiconductor.
机译:锂铟二硒化物(一种单晶中子敏感型半导体)材料已证明其具有高分辨率成像设备的功能。该传感器准备有一个55μm节距的金触点阵列,该阵列设计用于与Timepix成像ASIC耦合。在高通量同位素反应堆上对所得装置进行了测试,证明了在富集95%6 Li时对冷中子的响应。该成像系统进行了一系列实验,使用Paul Scherrer Institute(PSI)西门子星形掩模实现了小于200μm的分辨率极限,并且通过刀口测试实现了34μm的特征分辨率。此外,该系统还能够解析刻在3D打印的1 cm 3塑料块中的田纳西大学徽标。该技术标志着使用直接读出半导体的高分辨率中子成像的应用。

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