Neutron Imaging With Lithium Indium Diselenide Semiconductors

摘要

Lithium indium diselenide (LISe) semiconductors, enriched to 95% ^{6Li, exhibits a very high neutron detection efficiency per unit thickness and the potential for fast timing. However, the range of the secondary alpha and triton particles from neutron absorption limits the spatial resolution to ~34 µm. To overcome the limited spatial resolution of LISe-based neutron imagers, we have developed a modified η-function to identify the location of neutron absorption using a double-sided strip design. The modified η-function consists of training data from the simulated response across the strip electrodes for any interaction location and emission angle of the secondary charged particles. The current machine learning technique utilized is the coarse and fine regression trees. The η-function is tested using MCNP simulations, which shows that we are approaching our targeted 5 µm spatial resolution.}