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Simulation and Design of a Submicron Ultrafast Plasmonic Switch Based on Nonlinear Doped Silicon MIM Waveguide

机译:基于非线性掺杂硅MIM波导的亚微米超快等离子开关的仿真与设计

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We propose and analyze a submicron stub-assisted ultrafast all-optical plasmonic switch based on nonlinear MIM waveguide. It is constructed by two silicon stub filters sandwiched by silver cladding. The signal wavelength is assumed to be 1550 nm. The simulation results show a ?14.66 dB extinction ratio. Downscaling the silicon waveguide in MIM structure leads to enhancement of the effective Kerr nonlinearity due to tight mode confinement. Also, using O+ ions implanted into silicon, the switching time less than 10 ps and a delay time less than 8 fs are achieved. The overall length of the switch is 550 nm.
机译:我们提出并分析了基于非线性MIM波导的亚微米存根辅助超快全光等离子体开关。它由两个夹在银包层中的硅短截线滤波器构成。信号波长假定为1550 nm。仿真结果表明消光比为​​?14.66 dB。由于紧密模式限制,按MIM结构缩小硅波导尺寸导致有效Kerr非线性的增强。同样,使用注入到硅中的O +离子,可以实现小于10 ps的切换时间和小于8 fs的延迟时间。开关的总长度为550 nm。

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