Theory of Doping in Studies of Defect Concentration and Transport Properties of Transition Metal Oxides and Sulphides

摘要

In the present paper the theoretical basis and experimental verification of a method, enabling the calculation of defect concentration and their mobility in transition metal oxides and sulphides have been described. The idea of proposed method consists in determination of both these parameters in indirect way, i.e. in studying the influence of aliovalent metallic additions on the oxidation kinetics of a given metal (doping effect). It has been shown that from the results of oxidation kinetics of binary alloys, the enthalpy and entropy of defect formation and their migration can be calculated. These data, in turn, can be used for the calculation of defect concentration and defect mobility in pure, undoped oxides. Such a possibility has been illustrated on the example of nonstoichiometric nickel oxide, Ni_(1-y)O.