首页> 外文期刊>Transactions of the Japan Society for Computational Engineering and Science >Preferential Formation of Layered Structure of Ionic Liquid at Ionic Liquid Aqueous Solution / Graphite Electrode Interfaces Observed by Frequency-Modulation Atomic Force Microscopy
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Preferential Formation of Layered Structure of Ionic Liquid at Ionic Liquid Aqueous Solution / Graphite Electrode Interfaces Observed by Frequency-Modulation Atomic Force Microscopy

机译:频率调制原子力显微镜观察的离子液体在离子液体水溶液/石墨电极界面上层状结构的优先形成

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摘要

Local structure of ionic liquid (IL), 1-butyl-3-methylimidazolium tetrafluoroborate (BMIM-BF4), at IL + water mixtures / highly-oriented pyrolytic graphite (HOPG) interfaces has been investigated using frequency-modulation atomic force microscopy (FM-AFM). The imaging study of surface topography and energy dissipation of IL + water / HOPG interfaces suggested that even the hydrophilic IL molecules favored the HOPG substrate forming stable layers of ILs whose layer thickness corresponded to the averaged ion-pair size. A threshold molar ratio (χIL) for the first IL layer formation was between 0.01 and 0.05 and the HOPG surface was completely covered by IL layer at as low as χIL = 0.1. Force curve measurements in various concentrations of IL + water mixtures also suggested that the liquid side nature such as the apparent viscosity near the interfaces changed around the critical concentration. Dissolution of the IL layer was found to be a slow process, suggesting that the interface structure was history-dependent. Furthermore, electrochemical potential of the HOPG substrate affected the IL layer formation. Particularly application of positive potential resulted in growth of IL layer at the interface. [DOI: 10.1380/ejssnt.2014.89]
机译:使用调频原子力显微镜(FM)研究了离子液体(IL),1-丁基-3-甲基咪唑四氟硼酸盐(BMIM-BF4)在IL +水混合物/高取向热解石墨(HOPG)界面上的局部结构-AFM)。 IL +水/ HOPG界面的表面形貌和能量耗散的成像研究表明,即使亲水性IL分子也偏爱形成稳定的ILs层的HOPG基底,其层厚对应于平均离子对尺寸。第一IL层形成的阈值摩尔比(χIL)在0.01至0.05之间,并且HOPG表面以低至χIL= 0.1的IL层完全覆盖。在各种浓度的IL +水混合物中进行的力曲线测量还表明,液体侧面性质(例如界面附近的表观粘度)在临界浓度附近发生了变化。发现IL层的溶解是缓慢的过程,表明界面结构是历史依赖的。此外,HOPG基材的电化学势会影响IL层的形成。特别地,施加正电位导致界面处IL层的生长。 [DOI:10.1380 / ejssnt.2014.89]

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