Low-power Super-threshold FinFET Domino Logic Circuits for High-Speed Applications

摘要

Domino logic circuits have faster operating speed than commonly used static logic ones, because they havelower input capacitances and no contention during transition. However, Domino logic circuits have more power dissipationthan static logic ones, since their clock tress with high switch activity dissipates large energy. A low-power superthresholdcomputing scheme is proposed to reduce power dissipations of FinFET Domino logic circuits. The pull-downtransistors of all FinFET Domino circuits are configured in parallel, and thus improve operating speed. Unlike nearthresholdcircuits, super-threshold ones are supplied by much a larger supply voltage than the threshold voltage, but it islower than the standard supply voltage. Super-threshold FinFET logic circuits can attain low power consumption with favorableperformance, because FinFET devices operating on medium strong inversion regions can provide better drivestrength than conventional CMOS ones. The basic Domino logic gates are compared with static logic ones in terms of energyconsumption, delay, energy delay product (EDP), and maximum operation frequency with different voltages fromnear-threshold to super-threshold regions. All circuits are simulated with HSPICE at a PTM (Predictive Technology Model)32nm FinFET technology. The results show that the Domino gates can operate faster than static ones. In addition, it isalso shown that Domino gates exhibit the best EDP in super-threshold regions (about 700mV). Compared with the standardsupply voltage of 1.0 V, the Domino gates supplied by 0.8V can attain energy reductions of more than 38.3% with asmall performance penalty of about 14%.