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首页> 外文期刊>Upsala journal of medical sciences >The Current-voltage Behavior of Ion Channels: Important Features of the Energy Profile of the Gramicidin Channel Deduced from the Conductance-voltage Characteristic in the Limit of Low Ion Concentration
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The Current-voltage Behavior of Ion Channels: Important Features of the Energy Profile of the Gramicidin Channel Deduced from the Conductance-voltage Characteristic in the Limit of Low Ion Concentration

机译:离子通道的电流-电压行为:根据低离子浓度范围内的电导-电压特性推导的格拉米丁通道的能量分布的重要特征

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摘要

The conductance-voltage (G-V) characteristic of a single-filing, multi-barrier, multi-occupancy channel depends in the limit of low ion concentration upon only two parameters: the voltage dependence of the entry step and the ratio of the rate constant for leaving the channel to that for crossing its middle (14,17,20). We show that the G-V shape in this low concentration limit can be measured accurately using a triangular wave, many-channel technique and demonstrate that the observed shape is incompatible with that expected if the only important rate limiting barrier at low concentration were at the channel mouth. Instead the central barrier turns out, surprisingly, in view of the markedly sublinear I-V shape at low concentration, to be even slightly larger than the exit barrier. Additionally, we find that it is not possible to fit both the G-V shape and the concentration dependence of the zero-current conductance simultaneously with a 3-barrier 2-site model. However, by adding additional sites to yield a 3-barrier 4-site model either of the type 3B4S” where the extra site in each channel half is external to the mouth of the channel or of the type 3B4s' where the extra site is internal to the mouth of the channel, we obtain good agreement. Additionally, using the flux ratio data of Procopio and Andersen (19) to discriminate between 3B4s' and 3B4S” models, we find the 3B4S” model to be the only satisfactory one.
机译:单通道,多势垒,多占用通道的电导电压(GV)特性取决于低离子浓度的限制,仅取决于以下两个参数:进入步骤的电压依赖性和离子交换速率常数的比率离开通道以越过通道的中间(14,17,20)。我们表明,可以使用三角波多通道技术精确测量在此低浓度极限下的GV形状,并证明,如果在低浓度下唯一重要的限速屏障位于通道口,则观察到的形状与预期的形状不兼容。取而代之的是,考虑到低浓度下明显的亚线性I-V形状,中央壁垒竟然比出口壁垒稍大。此外,我们发现不可能同时使用3势垒2位模型同时拟合G-V形状和零电流电导的浓度依赖性。但是,通过添加额外的站点以生成3屏障4站点模型,其类型为3B4S”,其中每个通道一半的额外站点在通道口的外部,或者类型3B4s',其中额外站点为内部到渠道口,我们获得了良好的协议。此外,使用Procopio和Andersen(19)的通量比数据来区分3B4s和3B4S”模型,我们发现3B4S”模型是唯一令人满意的模型。

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