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Characterization of Highly Irradiated ALPIDE Silicon Sensors

机译:高度辐照的ALPIDE硅传感器的特性

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The ALICE (A Large Ion Collider Experiment) experiment at CERN will upgrade its Inner Tracking System (ITS) detector. The new ITS will consist of seven coaxial cylindrical layers of ALPIDE silicon sensors which are based on Monolithic Active Pixel Sensor (MAPS) technology. We have studied the radiation hardness of ALPIDE sensors using a 30 MeV proton beam provided by the cyclotron U-120M of the Nuclear Physics Institute of the Czech Academy of Sciences in ?e?. In this paper, these long-term measurements will be described. After being irradiated up to the total ionization dose 2.7 Mrad and non-ionizing energy loss 2.7 × 10 13 1 MeV n eq · cm ? 2 , ALPIDE sensors fulfill ITS upgrade project technical design requirements in terms of detection efficiency and fake-hit rate.
机译:CERN的ALICE(大型离子对撞机实验)实验将升级其内部跟踪系统(ITS)检测器。新的ITS将由基于单片有源像素传感器(MAPS)技术的ALPIDE硅传感器的七个同轴圆柱层组成。我们使用捷克科学院核物理研究所回旋加速器U-120M在?e提供的30 MeV质子束研究了ALPIDE传感器的辐射硬度。在本文中,将描述这些长期测量。辐照至总电离剂量为2.7 Mrad,非电离能量损失为2.7×10 13 1 MeV n eq·cm? 2,ALPIDE传感器在检测效率和伪造率方面满足ITS升级项目技术设计要求。

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