首页> 外文期刊>Universal Journal of Physics and Application >On Modeling of Ultrathin Field Emitter
【24h】

On Modeling of Ultrathin Field Emitter

机译:超薄场致发射器的建模研究

获取原文
       

摘要

An analytical model for the potential barrier near the apex of an ultrathin edge field emitter is suggested. It is used for the numerical modeling of electron tunneling from the emitter. The results show that the conventional approximation of a uniform field near the edge is not proper for an ultrathin emitter. The suggested approach is more adequate for modeling of field emission from nano-sized cold cathodes.
机译:建议建立超薄边缘场发射极顶点附近势垒的分析模型。它用于从发射极进行电子隧穿的数值模拟。结果表明,边缘附近均匀场的常规逼近不适用于超薄发射器。建议的方法更适合于模拟纳米级冷阴极的场发射。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号