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Electronic spin transport in dual-gated bilayer graphene

机译:双门双层石墨烯中的电子自旋输运

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Here, authors report spin transport in dual-gated, high-mobility bilayer graphene spin valves. Their comparative study suggests that substrate and contacts are not the key limiting sources for spin relaxation, but rather it pinpoints the role of polymer residues in current devices. Spin transport in bilayer graphene is gate tunable and this allows authors to demonstrate the evidence of magnetic moments which act as spin hot spots. By taking the advantage of their novel device architecture, they demonstrate the complete suppression of the spin signal while a transport gap was induced in these spin valve devices.
机译:在这里,作者报道了双门高迁移率双层石墨烯自旋阀中的自旋运输。他们的比较研究表明,衬底和触点不是旋转弛豫的主要限制来源,而是指出了聚合物残留物在当前设备中的作用。双层石墨烯中的自旋输运是门可调的,这使作者能够证明充当自旋热点的磁矩的证据。通过利用其新颖的设备架构,他们证明了自旋信号的完全抑制,同时在这些自旋阀设备中引发了传输间隙。

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