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首页> 外文期刊>Photonics >Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q -Values: Experimental Characterization
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Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q -Values: Experimental Characterization

机译:具有高Q值的绝缘体上硅瞬逝耦合矩形微谐振器:实验表征

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摘要

We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 μm 2 in silicon-on-insulator in an add-drop filter configuration. The influence of the geometrical parameters of the device was experimentally characterized and a high Q value of 13,000 was demonstrated as well as the multimode optical resonance characteristics in the drop port. We also show a 95% energy transfer between ports when the device is operated in TM-polarization and determine the full symmetry of the device by using an eight-port configuration, allowing the drop waveguide to be placed on any of its sides, providing a way to filter and route optical signals. We used the FDTD method to analyze the device and e-beam lithography and dry etching techniques for fabrication.
机译:我们报告了在滴加滤波器配置中的绝缘体上硅上尺寸最大为20×10μm2的e逝耦合矩形微谐振器。通过实验表征了器件的几何参数的影响,并证明了13,000的高Q值以及出入口的多模光学共振特性。我们还展示了当设备以TM极化工作时,端口之间95%的能量转移,并通过使用八端口配置确定设备的完全对称性,从而允许将分支波导放置在其任何一侧,从而提供了过滤和路由光信号的方法。我们使用FDTD方法来分析器件,电子束光刻和干法蚀刻技术以进行制造。

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