Dynamics of hydrogen in hydrogenated amorphous silicon

摘要

The problem of hydrogen diffusion in hydrogenated amorphous silicon (a-Si:H) is studied semiclassically. It is found that the local hydrogen concentration ???uctuations-induced extra potential wells, if intense enough, lead to the localized electronic states in a-Si:H. These localized states are metastable. The trapping of electrons and holes in these states leads to the electrical degradation of the material. These states also act as recombination centers for photo-generated carriers (electrons and holes) which in turn may excite a hydrogen atom from a nearby Sia€“H bond and breaks the weak (strained) Sia€“Si bond thereby apparently enhancing the hydrogen diffusion and increasing the light-induced dangling bonds.