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Simulation of inverse Compton scattering and its implications on the scattered linewidth

机译:康普顿逆散射的模拟及其对散射线宽的影响

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Rising interest in inverse Compton sources has increased the need for efficient models that properly quantify the behavior of scattered radiation given a set of interaction parameters. The current state-of-the-art simulations rely on Monte Carlo--based methods, which, while properly expressing scattering behavior in high-probability regions of the produced spectra, may not correctly simulate such behavior in low-probability regions (e.g. tails of spectra). Moreover, sampling may take an inordinate amount of time for the desired accuracy to be achieved. In this paper, we present an analytic derivation of the expression describing the scattered radiation linewidth and propose a model to describe the effects of horizontal and vertical emittance on the properties of the scattered radiation. We also present an improved version of the code initially reported in Krafft et al. [Phys. Rev. Accel. Beams 19, 121302 (2016)], that can perform the same simulations as those present in cain and give accurate results in low-probability regions by integrating over the emissions of the electrons. Finally, we use these codes to carry out simulations that closely verify the behavior predicted by the analytically derived scaling law.
机译:对逆康普顿源的关注日益增加,因此需要一种有效的模型,该模型可以在给定一组相互作用参数的情况下正确地量化散射辐射的行为。当前的最新模拟依赖于基于蒙特卡洛的方法,该方法虽然可以正确表达所产生光谱的高概率区域中的散射行为,但可能无法正确模拟低概率区域(例如尾巴)中的这种行为。光谱)。此外,采样可能要花费很长时间才能达到所需的精度。在本文中,我们提供了描述散射辐射线宽的表达式的解析推导,并提出了一个模型来描述水平和垂直发射率对散射辐射的特性的影响。我们还提供了最初在Krafft等人中报告的代码的改进版本。 [物理牧师电子束19,121302(2016)],可以执行与隐隐存在的模拟相同的模拟,并通过积分电子的发射在低概率区域中给出准确的结果。最后,我们使用这些代码进行模拟,以紧密验证由解析得出的缩放定律预测的行为。

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