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首页> 外文期刊>Optoelectronics and Advanced Materials-Rapid Communications >Influence of oxygen partial pressure and annealing on magnetic properties of Al -doped ZnO thin films
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Influence of oxygen partial pressure and annealing on magnetic properties of Al -doped ZnO thin films

机译:氧分压和退火对掺铝ZnO薄膜磁性能的影响

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AldopedZnOfilmshavebeenpreparedusingdifferentAr:O2ratiosandannealingconditionsonglasssubstratesbydcreactivemagnetronco-sputtering.TheresultsofmagneticmeasurementsshowthatdifferentoxygenpartialpressuresandannealingtemperatureshavegreatinfluenceonthemagnetismofdopedZnOthinfilms.ThefactthatonlythefilmspreparedatanAr:O2ratioof1:1andannealedat200oCinvacuumshowclearroomtemperatureferromagnetismwhichdisappearsafterannealedat500oCinvacuumindicatesthattheferromagnetismmayberelatedtointernallatticestress.Theseferromagneticfilmshavebeenannealedat200oCinairsubsequentlyandshowlowercoercivityandenhancedsaturationmagnetization,whichmaybeattributedtotheannealinginaircausingmoreinterstitialAlatomstoconvertintosubstitutionalAlions,andconsequentlyincreasingthechargetransferbetweentheAlandtheZnOmatrix,leadingtoincreasedmagnetism.
机译:AldopedZnOfilmshavebeenpreparedusingdifferentAr:O2ratiosandannealingconditionsonglasssubstratesbydcreactivemagnetronco-sputtering.TheresultsofmagneticmeasurementsshowthatdifferentoxygenpartialpressuresandannealingtemperatureshavegreatinfluenceonthemagnetismofdopedZnOthinfilms.ThefactthatonlythefilmspreparedatanAr:O2ratioof1:1andannealedat200oCinvacuumshowclearroomtemperatureferromagnetismwhichdisappearsafterannealedat500oCinvacuumindicatesthattheferromagnetismmayberelatedtointernallatticestress.Theseferromagneticfilmshavebeenannealedat200oCinairsubsequentlyandshowlowercoercivityandenhancedsaturationmagnetization,whichmaybeattributedtotheannealinginaircausingmoreinterstitialAlatomstoconvertintosubstitutionalAlions,andconsequentlyincreasingthechargetransferbetweentheAlandtheZnOmatrix,leadingtoincreasedmagnetism。

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