Photoluminescence study of blue light LED epitaxial wafer during growth by MOCVD

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Photoluminescence study of blue light LED epitaxial wafer during growth by MOCVD

机译：MOCVD法生长蓝光LED外延片的光致发光研究

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Inthiswork,anindependentdesignphotoluminescence(PL)measurementtoolwasusedtomonitorthePLspectraevolutionduringepitaxialgrowthofblue-greenquantumwellstructuresonsiliconsubstratebymetalorganicchemicalvapordeposition(MOCVD).AsplitopticalfiberandanotchOD6filterwereemployedtominimizetheincominglaserbeam(405nm)influenceonthespectra.Usingthismethod,thePLcharacterizationofthelayerbetweenstepsofthegrowthatseveralpointswereobtainedbydecreasingthereactortemperature.Theeffectsofthetemperature,thenumberofquantumwellsandthep-typeGaNlayeronthephotoluminescencearereported.Wefoundthatthepresenceofthep-typeGaNlayersignificantlydecreasedtheintensityofmultiplequantumwellsPL.

机译：Inthiswork，anindependentdesignphotoluminescence（PL）measurementtoolwasusedtomonitorthePLspectraevolutionduringepitaxialgrowthofblue-greenquantumwellstructuresonsiliconsubstratebymetalorganicchemicalvapordeposition（MOCVD）.AsplitopticalfiberandanotchOD6filterwereemployedtominimizetheincominglaserbeam（405nm）的influenceonthespectra.Usingthismethod，thePLcharacterizationofthelayerbetweenstepsofthegrowthatseveralpointswereobtainedbydecreasingthereactortemperature.Theeffectsofthetemperature，thenumberofquantumwellsandthep-typeGaNlayeronthephotoluminescencearereported.Wefoundthatthepresenceofthep-typeGaNlayersignificantlydecreasedtheintensityofmultiplequantumwellsPL。

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《Optoelectronics and Advanced Materials-Rapid Communications》 |2015年第2015期|共页
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1. Surface studies and photoluminescence of GaN epitaxial layers grown by MOCVD technique for applications of solar cells and light emitting devices [J] . Kodigala Subba Ramaiah Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2016,第Null期

机译：通过MOCVD技术生长的GaN外延层的表面研究和光致发光，用于太阳能电池和发光器件
2. Polishing of (100)gamma-LiAlO_2 wafer and its effect on the epitaxial growth of ZnO films by MOCVD [J] . Hui Lin, Shengming Zhou, Hao Teng Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2009,第1a2期

机译：MOCVD法抛光（100）γ-LiAlO_2晶片及其对ZnO薄膜外延生长的影响
3. The influence of the coating metals with various work function on the photoluminescence of a GaN-based blue LED wafer [J] . Wenqing Fang, Chuanbin Xiong, Changda Zheng, Journal of Luminescence . 2007,第2期

机译：具有各种功函数的涂层金属对GaN基蓝色LED晶片的光致发光的影响
4. Epitaxial Ⅲ-Nitride Film Growth in a Single Wafer Rotating Disk MOCVD Reactor [C] . George D. Papasouliotis, Jie Su, Balakrishnan Krishnan, GaN amp; SiC power technologies 5 . 2015

机译：单晶片转盘MOCVD反应器中外延Ⅲ-氮化物膜的生长
5. Studies of light emission and epitaxial growth on crystal surfaces. [D] . Evans, Paul Gregory. 2000

机译：研究晶体表面上的发光和外延生长。
6. Short-wavelength light beam in situ monitoring growth of InGaN/GaN green LEDs by MOCVD [O] . Xiaojuan Sun, Dabing Li, Hang Song, 2012

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8. Study of Grown-In Defects Verses Growth Parameters in GaAs and Al(x)Ga(1-x)AS Epitaxial Films Grown by LPE and MOCVD Techniques [R] . Li, S. S. 1985

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Photoluminescence study of blue light LED epitaxial wafer during growth by MOCVD

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