Electron temperature determination of bismuth containing electrodelless light sources during self-modulation regime

摘要

In this work we estimate electron temperature in bismuth containing light sources in self-modulation regime. The electron-impact excitation rate coefficients were used in modified Arrhenius form. For the electron temperature determination semilogarithmic plot method together with intensity distribution of Ar spectral lines were used. The experiment results showed that electron temperature in high frequency electrodeless plasma values were around 0.4 eV in maximum phase and 0.6–0.7 eV in minimum phase of the self-modulation regime.