Optical and structural characterization of YSZ thin films deposited by excimer laser ablation for planar potentiometric oxygen sensors applications

摘要

We have performed optical and structural characterization of YttriaStabilized Zirconia (YSZ) thin films prepared by pulsed laser deposition (PLD) on Si(100) and Pt/Si (100) substrates from the ablation of a 8YSZ target by ArF excimerlaser. X-ray Diffraction (XRD) analysis stated orthorhombic films with [111]preferential orientation for Pt/ Si substrate and cubic phase for Si (100) substrate.Secondary Ion Mass Spectrometry (SIMS) investigation shows a stoichiometrictransfer of target composition to the substrates. By using Atomic Force Microscopy(AFM) and Variable Angle Spectroscopic Ellipsometry (VASE) we have determinedthe thickness, roughness, and refractive indices of thin films. Ellipsometric data wereobtained with the Cauchy model in the spectral range 400-1000 nm, at three angle ofincidence: 60 65 and 70 It was obtained high-k dense YSZ thin films depositedon Si (100) with applications for electrolyte of ionic devices, like oxygen sensors.