Silicon nitride foams were prepared by direct foaming and subsequent rapid sintering at 1600 °C. The intense thermal radiation generated under the pressureless spark plasma sintering condition facilitated necking of Si3N4 grains. The prepared foams possessed a porosity of ~80 vol% and a compressive strength of ~10 MPa, which required only ~30 min for the entire sintering processes. Rapid growth of one-dimensional SiC nanowires from the cell walls was also observed. Thermodynamic calculations indicated that the vapor–liquid–solid model is applicable to the formation of SiC nanowires under vacuum.
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机译:通过直接发泡并随后在1600°C下快速烧结来制备氮化硅泡沫。在无压放电等离子体烧结条件下产生的强烈热辐射促进了Si 3 SUB> N 4 SUB>晶粒的颈缩。所制备的泡沫具有〜80vol%的孔隙率和〜10MPa的抗压强度,在整个烧结过程中仅需要〜30min。还观察到从细胞壁快速生长一维SiC纳米线。热力学计算表明,气液固模型适用于真空下SiC纳米线的形成。
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