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Investigations on interface microstructure and strength properties of dissimilar tin bronze/superalloy diffusion bonded joints

机译:锡青铜/高温合金扩散连接接头的界面组织和强度性能研究

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Diffusion bonding of dissimilar metals QSn4-3 and GH34 by using a QSn6.5-0.1 interlayer has been conducted in this study. The purpose of the study is to investigate the interface microstructure and strength of the joints, and to demonstrate the feasibility of using another high Sn content tin bronze interlayer to fabricate a typical microstructure joint. Microstructure examinations show that a penetration structure is formed by using a QSn6.5-0.1 interlayer, and its feature is apparent. Also, prolonging the holding time is conducive to the forming of the penetration structure. Shear testing results show that the penetration structure formed in a diffusion bonded joint of QSn4-3 and GH34 enhances the joint strength to almost the same as the QSn4-3 base metal. The mechanism forming the penetration structure is as follows: Sn atoms diffuse faster than Cu atoms into GH34 causing more Sn atoms to aggregate at the GH34 grain boundary. When the bonding temperature reaches 950°C for a short time, the aggregated Cu alloys having higher content of Sn than 5.3wt.% will melt, and penetrate and disrupt some grains from GH34 base metal.
机译:在这项研究中,已经通过使用QSn6.5-0.1中间层进行了异种金属QSn4-3和GH34的扩散键合。该研究的目的是研究接头的界面微结构和强度,并证明使用另一种高锡含量的锡青铜中间层来制造典型的微结构接头的可行性。显微组织检查表明,通过使用QSn6.5-0.1中间层形成了渗透结构,其特征显而易见。而且,延长保持时间也有利于穿透结构的形成。剪切试验结果表明,在QSn4-3和GH34的扩散结合接头中形成的熔深结构使接头强度提高到几乎与QSn4-3母材相同。形成渗透结构的机理如下:Sn原子比Cu原子扩散到GH34的速度更快,导致更多的Sn原子在GH34晶界聚集。当键合温度在短时间内达到950°C时,Sn含量高于5.3wt。%的聚集Cu合金将熔化,并渗透并破坏GH34基础金属中的某些晶粒。

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