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首页> 外文期刊>Science Advances >Electrically tunable single- and few-layer MoS2 nanoelectromechanical systems with broad dynamic range
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Electrically tunable single- and few-layer MoS2 nanoelectromechanical systems with broad dynamic range

机译:具有宽动态范围的电可调单层和多层MoS2纳米机电系统

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摘要

Atomically thin semiconducting crystals [such as molybdenum disulfide (MoS2)] have outstanding electrical, optical, and mechanical properties, thus making them excellent constitutive materials for innovating new two-dimensional (2D) nanoelectromechanical systems (NEMS). Although prototype structures have recently been demonstrated toward functional devices such as ultralow-power, high-frequency tunable oscillators and ultrasensitive resonant transducers, both electrical tunability and large dynamic range (DR) are critical and desirable. We report the first experimental demonstration of clearly defined single-, bi-, and trilayer MoS2 2D resonant NEMS operating in the very high frequency band (up to ~120 MHz) with outstanding electrical tunability and DR. Through deterministic measurement and calibration, we discover that these 2D atomic layer devices have remarkably broad DR (up to ~70 to 110 dB), in contrast to their 1D NEMS counterparts that are expected to have limited DR. These 2D devices, therefore, open avenues for efficiently tuning and strongly coupling the electronic, mechanical, and optical properties in atomic layer semiconducting devices and systems.
机译:原子薄的半导体晶体(例如二硫化钼(MoS 2 ))具有出色的电,光和机械性能,因此使其成为用于创新新型二维(2D)纳米机电系统(NEMS)的优良构成材料)。尽管最近已经向功能器件(例如超低功率,高频可调振荡器和超灵敏谐振换能器)展示了原型结构,但电气可调性和大动态范围(DR)都是至关重要的,也是人们所希望的。我们报告了明确定义的单层,双层和三层MoS 2 2D共振NEMS的首次实验演示,该NEMS在非常高的频带(高达〜120 MHz)中工作,具有出色的电可调性和DR。通过确定性的测量和校准,我们发现这些2D原子层设备具有显着较宽的DR(高达〜70至110 dB),而与预期具有有限DR的1D NEMS同类设备相反。因此,这些2D器件为在原子层半导体器件和系统中有效调谐和牢固耦合电子,机械和光学特性开辟了道路。

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