...
首页> 外文期刊>Science Advances >Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells
【24h】

Enhanced mobility CsPbI3 quantum dot arrays for record-efficiency, high-voltage photovoltaic cells

机译:增强迁移率的CsPbI3量子点阵列,用于记录效率高的高压光伏电池

获取原文

摘要

We developed lead halide perovskite quantum dot (QD) films with tuned surface chemistry based on A-site cation halide salt (AX) treatments. QD perovskites offer colloidal synthesis and processing using industrially friendly solvents, which decouples grain growth from film deposition, and at present produce larger open-circuit voltages ( V OC’s) than thin-film perovskites. CsPbI3 QDs, with a tunable bandgap between 1.75 and 2.13 eV, are an ideal top cell candidate for all-perovskite multijunction solar cells because of their demonstrated small V OC deficit. We show that charge carrier mobility within perovskite QD films is dictated by the chemical conditions at the QD-QD junctions. The AX treatments provide a method for tuning the coupling between perovskite QDs, which is exploited for improved charge transport for fabricating high-quality QD films and devices. The AX treatments presented here double the film mobility, enabling increased photocurrent, and lead to a record certified QD solar cell efficiency of 13.43%.
机译:我们基于A部位阳离子卤化物盐(AX)处理技术开发了具有调整后的表面化学特性的卤化钙钛矿型量子点(QD)薄膜。 QD钙钛矿可以使用工业上友好的溶剂进行胶体合成和加工,从而使晶粒生长与薄膜沉积脱钩,并且目前产生的开路电压(V OC )比薄膜钙钛矿大。 CsPbI 3 QDs的带隙在1.75和2.13 eV之间,是全钙钛矿多结太阳能电池的理想顶部电池候选,因为它们表现出较小的V OC 缺陷。我们表明钙钛矿QD膜内的电荷载流子迁移率是由QD-QD交界处的化学条件决定的。 AX处理提供了一种调节钙钛矿QD之间耦合的方法,该方法可用于改善电荷传输,从而制造出高质量的QD薄膜和器件。此处介绍的AX处理使薄膜迁移率增加了一倍,从而增加了光电流,并导致创纪录的QD太阳能电池效率达到13.43%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号