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Magnetism in semiconducting molybdenum dichalcogenides

机译:半导体二卤化钼的磁性

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Transition metal dichalcogenides (TMDs) are interesting for understanding the fundamental physics of two-dimensional (2D) materials as well as for applications to many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below TM = 40 and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin rotation (μSR), scanning tunneling microscopy (STM), and density functional theory (DFT) calculations. The μSR measurements show the presence of large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites, which are randomly distributed in the lattice at the subpercent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9 to 2.8 μB. Further, we find that the magnetic order stabilized in 2H-MoTe2 and 2H-MoSe2 is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe2 and 2H-MoSe2 as a new class of magnetic semiconductors and open a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors.
机译:过渡金属二硫化碳(TMD)对于理解二维(2D)材料的基本物理原理以及在许多新兴技术(包括自旋电子学)中的应用很有趣。在这里,我们报告通过介子自旋旋转(μSR),扫描隧道显微镜(STM)分别在体半导体TMD 2H-MoTe2和2H-MoSe2中发现TM = 40和100 K以下的远距离磁序,和密度泛函理论(DFT)计算。 μSR测量结果表明两种化合物在低温下均存在大而均匀的内部磁场,这表明了长程磁序。 DFT计算表明,晶体中存在缺陷会促进这种磁性。 STM测量表明,这些材料中的绝大多数缺陷是金属空位和硫族金属反位点,它们以低于百分之一的水平随机分布在晶格中。 DFT表明抗位缺陷是磁性的,磁矩在0.9到2.8μB的范围内。此外,我们发现在2H-MoTe2和2H-MoSe2中稳定的磁阶对静水压高度敏感。这些发现将2H-MoTe2和2H-MoSe2确立为一类新型的磁性半导体,并为研究这些有趣的半导体中2D物理和磁性的相互作用开辟了道路。

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