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Hydrogen Storage in VN&sub&x&/sub&-H&sub&y&/sub& Thin Films

机译:氢在VN子/子-H子/子中的氢存储。薄膜

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Vanadium or its alloy-based hydrides are intensively studied at the moment with regard to their use as hydrogen absorbents. Most experiments were carried out using “bulk” materials. This paper uses ion beam-assisted deposition technology (IBAD) to create thin-film nanocrystalline VN x ) -H y ) hydrogen storages. The transmission electron microscopy and scanning electron microscopy were used to study the initial stages of the film formation. The main mechanisms of the formation of intergranular pores in nanogranular structures have been established. The interrelation of the parameters of the IBAD and those of film structure has been shown. The obtained data allowed for the explanation of the mechanisms of hydrogen absorption and desorption by thin films. It was shown that the availability of branched network of intergranular pores allows VN x ) -H y ) structures to accumulate hydrogen within a few minutes at a pressure of 0.5 MPa. Hydrogen in amount of up to 2.55 wt% is retained in the films of 3 μm thick at room temperature and atmospheric pressure. The hydrogen desorption starts at 100℃.
机译:钒或其合金氢化物作为氢吸收剂的用途目前正在深入研究。大多数实验都是使用“批量”材料进行的。本文使用离子束辅助沉积技术(IBAD)来创建薄膜纳米晶体VN x)-H y)氢存储。透射电子显微镜和扫描电子显微镜用于研究膜形成的初始阶段。已经建立了在纳米颗粒结构中形成晶间孔的主要机理。已经显示了IBAD的参数和膜结构的参数之间的相互关系。获得的数据可以解释薄膜吸收氢和吸收氢的机理。结果表明,晶间孔分支网络的可用性允许VN x)-H y)结构在0.5 MPa的压力下在几分钟内积累氢。在室温和大气压下,厚度高达2.55 wt%的氢气保留在3μm厚的薄膜中。氢的解吸从100℃开始。

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