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首页> 外文期刊>Optics and Photonics Journal >Intensity Dependent Nonlinear Absorption in Direct and Indirect Band Gap Crystals under Nano and Picosecond Z-Scan
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Intensity Dependent Nonlinear Absorption in Direct and Indirect Band Gap Crystals under Nano and Picosecond Z-Scan

机译:纳米和皮秒Z扫描下直接和间接带隙晶体中强度相关的非线性吸收

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摘要

The nonlinear absorption properties of direct (GaN) and indirect (CdI2) band gap crystals have been studied by using an open aperture Z-scan technique under fundamental (1064 nm) and frequency doubled (532 nm) wavelength respectively with 10 ns or 60 ps pulse durations. Direct band gap crystal exhibits two and three photon absorption at all input irradiances. On the other hand, at low input irradiance the indirect band gap crystal exhibits saturable absorption (SA). At higher input irradiances two and three photon absorption becomes dominant. A monotonic increase of the nonlinear absorption coefficients with increasing laser pulse duration from 60 ps to 10 ns is observed for GaN and CdI2 crystals.
机译:通过使用开孔Z扫描技术研究了基本(1064 nm)和倍频(532 nm)波长分别为10 ns或60 ps的直接(GaN)和间接(CdI2)带隙晶体的非线性吸收特性脉冲持续时间。直接带隙晶体在所有输入辐照下均表现出两个和三个光子吸收。另一方面,在低输入辐照度下,间接带隙晶体表现出饱和吸收(SA)。在较高的输入辐照度下,两个和三个光子吸收成为主导。对于GaN和CdI2晶体,随着激光脉冲持续时间从60 ps增加到10 ns,非线性吸收系数会单调增加。

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