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Influence of thermal treatment on the near-infrared broadband luminescence of Bi:CsI crystals

机译:热处理对Bi:CsI晶体近红外宽带发光的影响

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Near-infrared (NIR) emitting active centers can exist abundant in Bi:CsI crystal. In addition, Bi:CsI have the simplest crystal structure, body-centered cubic (BCC). In this paper, annealing and quenching treatments were carried out in detail to identify the nature of NIR emitting active centers in Bi:CsI crystals. The changes of absorption and emission spectra with increasing the thermal treatment temperature indicated that the two NIR emission bands at 1210 nm and 1580 nm were related to Bi+ and Bi2 +, respectively. Besides, the assignments of absorption bands and the thermal behaviors of Bi3+, Bi2+, Bi+ and Bi2 + were discussed as well.
机译:Bi:CsI晶体中可以大量存在发射近红外(NIR)的活性中心。此外,Bi:CsI具有最简单的晶体结构,即体心立方(BCC)。在本文中,进行了详细的退火和淬火处理,以确定Bi:CsI晶体中NIR发射活性中心的性质。吸收光谱和发射光谱随热处理温度的升高而变化,表明在1210 nm和1580 nm处的两个NIR发射带分别与Bi +和Bi2 +有关。此外,还讨论了Bi3 +,Bi2 +,Bi +和Bi2 +的吸收带分配和热行为。

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