Direct ultrafast laser written C-band waveguide amplifier in Er-doped chalcogenide glass

摘要

This paper reports the fabrication and characterization of an ultrafast laser written Er-doped chalcogenide glass buried waveguide amplifier; Er-doped GeGaS glass has been synthesized by the vacuum sealed melt quenching technique. Waveguides have been fabricated inside the 4 mm long sample by direct ultrafast laser writing. The total passive fiber-to-fiber insertion loss is 2.58 ± 0.02 dB at 1600 nm, including a propagation loss of 1.6 ± 0.3 dB. Active characterization shows a relative gain of 2.524 ± 0.002 dB/cm and 1.359 ± 0.005 dB/cm at 1541 nm and 1550 nm respectively, for a pump power of 500 mW at a wavelength of 980 nm.