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首页> 外文期刊>Optics and Photonics Journal >Photoluminescence and Structural Analysis of Samarium Doped TiO&sub&2&/sub& Thin Films and Their Applications to Visible LEDs
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Photoluminescence and Structural Analysis of Samarium Doped TiO&sub&2&/sub& Thin Films and Their Applications to Visible LEDs

机译:掺Do的TiO 2 / sub 2的光致发光和结构分析。薄膜及其在可见LED中的应用

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Samarium-doped anatase TiO_(2) (A- TiO 2):Sm) and rutile (R- TiO 2):Sm) single phase thin films are fabricated by laser ablation and post-annealing at different temperatures. A- TiO 2):Sm samples exhibit intense PL emission, whilst R- TiO 2):Sm samples exhibit weak PL emission. The local crystal structure of Sm-dopants is investigated using X-ray absorption fine structure (XAFS) measurements. The thin films showing strong PL emission have lower crystal symmetry than the other samples, which show weak PL emission. We report the relationship between changing the symmetry of the local structure and activation of the luminescent center. The local structure of S m 3 + ) thin films annealed at 600 ° C to 800 ° C, which possess an activated semi-stable S m 3 + ) ions luminescent center, dramatically changes from having high symmetry to low symmetry. While the phase transitioned R- TiO 2):Sm and fabricated as R- TiO 2):Sm samples showed highly symmetric. Hence, the coordination around the doped-Sm~( 3 + ) ions is the key factor for exhibiting an intense PL emission. Therefore, activation of the luminescent center is strongly connected with the distorted local crystal symmetry, which is proposed as one of the factors defining the transfer probability. In this work, we discuss the connection between coordination around S m 3 + ) ions and PL intensity, and optical and electrical properties of a n~( + )-ITO/ TiO 2):Sm/p-NiO/p~( + )-Si hetero junction LED preparing with optimal fabricating condition.
机译:通过激光烧蚀和后退火在不同温度下制备掺mar锐钛矿TiO_(2)(A-TiO 2):Sm)和金红石(R-TiO 2):Sm)单相薄膜。 A-TiO 2):Sm样品显示出很强的PL发射,而R-TiO 2):Sm样品显示出很弱的PL发射。使用X射线吸收精细结构(XAFS)测量研究了Sm掺杂剂的局部晶体结构。显示强PL发射的薄膜具有比其他样品低的晶体对称性,而其他样品显示弱PL发射。我们报告改变局部结构的对称性与激活发光中心之间的关系。在600°C至800°C退火的S m 3 +)薄膜的局部结构具有活化的半稳定S m 3 +)离子发光中心,从高对称性变为低对称性。虽然相转变为R-TiO 2):Sm并制造为R-TiO 2):Sm样品显示出高度对称。因此,掺杂的Sm〜(3 +)离子周围的配位是显示强烈的PL发射的关键因素。因此,发光中心的激活与畸变的局部晶体对称性紧密相关,这被认为是限定转移概率的因素之一。在这项工作中,我们讨论了围绕S m 3 +)离子的配位与PL强度之间的关系,以及an〜(+)-ITO / TiO 2):Sm / p-NiO / p〜(+)的光学和电学性质。 -Si异质结LED具有最佳制造条件的制备。

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