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首页> 外文期刊>Revista mexicana de fisica >Effects of indium doping on the structural and optical properties of CdSe thin films deposited by chemical bath
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Effects of indium doping on the structural and optical properties of CdSe thin films deposited by chemical bath

机译:铟掺杂对化学浴沉积CdSe薄膜结构和光学性能的影响

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摘要

Thin films of n-type CdSe have been grown on Corning glass substrate by chemical bath deposition, prepared with Sodium Seleno-Sulphate (Na2SSeO3), Cadmium Chloride (CdCl2) and Indium Tri-Chloride (InCl3), mixed in an aqueous environment. The effects of different In doping concentrations have been investigated. X-ray diffraction spectra show that at low In concentration only the CdSe lattice is present in the deposited film, whereas CdIn2Se4 and InSe compounds are obtained at higher In concentrations. Optical properties have been calculated from transmission spectra and photoluminescence measurements. From transmission spectra, the absorption coefficient and optical gap were obtained; photoluminescence spectra show band-band recombination from 10 K to room temperature.
机译:n型CdSe薄膜已通过化学浴沉积法在康宁玻璃基板上生长,该化学浴法是在水性环境中混合使用硒代硫酸钠(Na2SSeO3),氯化镉(CdCl2)和三氯化铟(InCl3)制备的。已经研究了不同In掺杂浓度的影响。 X射线衍射光谱表明,在低In浓度下,沉积膜中仅存在CdSe晶格,而在较高In浓度下获得CdIn2Se4和InSe化合物。光学性质已经由透射光谱和光致发光测量值计算得出。由透射光谱获得吸收系数和光学间隙。光致发光光谱显示了从10 K到室温的能带重组。

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