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A Facile Doping of Graphene Oxide Nanosheets

机译:氧化石墨烯纳米片的简便掺杂

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One step and facile synthesis of SnO2 doped graphene oxide (GO) nanoparticles were conducted by applying a new doping method based on modified Hummer method. The structural and thermal behavior were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman spectroscopy, and thermal gravitational analysis (TGA). GO sheets exhibited scrolling and crumpling morphology. SnO2 was embedded in graphite during the initial stage of modified Hummer method and the surface morphology has aggregated lamellar structure with wrinkles. In Raman spectra, the characteristic D-band and G-band were observed in all the samples and the change in their ratio is attributed to the provided defects. The effect of incorporating tin nanoparticles in GO on the electrochemical behavior was investigated. The specific capacitance increases from 113 F/g to 355 F/g after SnO2 doping. The better electrochemical behavior, the enhancement of conduction and capacitance is mainly related to the insertion of SnO2 nano particles which act as a well decorated spacers for GO nanosheets and the mechanical strength of GO prevents the volumetric expansion of SnO2 networks.
机译:采用基于改进的悍马法的新型掺杂方法,一步一步合成了SnO 2 掺杂的氧化石墨烯(GO)。通过X射线衍射(XRD),扫描电子显微镜(SEM),透射电子显微镜(TEM),拉曼光谱和热引力分析(TGA)研究了结构和热行为。 GO片材表现出滚动和皱缩形态。 SnO 2 在改进的悍马方法的初始阶段被嵌入石墨中,其表面形态聚集了具有褶皱的层状结构。在拉曼光谱中,在所有样品中均观察到了特征性的D波段和G波段,并且它们比率的变化归因于所提供的缺陷。研究了在GO中掺入锡纳米颗粒对电化学行为的影响。 SnO 2 掺杂后,比电容从113 F / g增加到355 F / g。更好的电化学行为,导电性和电容的增强主要与SnO 2 纳米颗粒的插入有关,这些颗粒充当GO纳米片的装饰良好的间隔物,GO的机械强度阻止了其体积膨胀SnO 2 网络。

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