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首页> 外文期刊>Research journal of applied science, engineering and technology >Describing a Laser Diode Emulation Tool Using Single Emitter Simulation Results
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Describing a Laser Diode Emulation Tool Using Single Emitter Simulation Results

机译:使用单发射器仿真结果描述激光二极管仿真工具

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This study describes and explores the use of a laser diode simulation tool at the single emitter level of operation and how they can be degraded. A test of the simulation tool is implemented to complement the by-emitter degradation analysis of high power laser diodes. The simulation tool is called Speclase, designed for the simulation of single emitters. Tests were performed using a 975 nm narrow-angle (<1o) tapered laser structure from Alcatel Thales III-V Lab with front and rear facet reflectivities of 3 and 90%, respectively. The tool worked for both the constant current and power modes of operation. Simulation results were obtained for both constant QW trap density, based on the maximum QW temperature and variable QW trap density generation due to local heating. Single emitter degradation results are obtained using the Arrhenius equation to compare the rate of degradation between the constant and variable QW trap densities.
机译:这项研究描述并探讨了在单发射器操作级别使用激光二极管仿真工具的方法以及如何降低它们的性能。对仿真工具进行了测试,以补充大功率激光二极管的发射极降级分析。该仿真工具称为Speclase,专为单个发射器的仿真而设计。使用Alcatel Thales III-V Lab的975 nm窄角(<1o)锥形激光结构进行了测试,其正面和背面的反射率分别为3%和90%。该工具适用于恒定电流和功率操作模式。基于最大QW温度和由于局部加热而产生的可变QW阱密度,获得了恒定QW阱密度的模拟结果。使用Arrhenius方程比较固定和可变QW陷阱密度之间的退化速率,可以获得单发射极退化结果。

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