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Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

机译:利用半导体等离子超材料的非线性太赫兹器件

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Nonlinear plasmonic metamaterials that are resonant in the terahertz spectral range have been made from disks of indium arsenide. Huseyin Seren and co-workers in the USA fabricated these materials and note that nonlinear semiconductor plasmonic disks may be useful as optical limiters or saturable absorbers. The team used dry etching to fabricate hexagonal arrays of indium arsenide disks that are 70 micrometres in diameter. The samples were doped to a level of 1017 cm−3 resulting in a strong plasmonic response at 0.8 terahertz. A key advantage of using semiconductors as the plasmonic medium is that the doping level can be used to control the resonance frequency and other properties of the metamaterial.
机译:在太赫兹光谱范围内共振的非线性等离子体超材料已经由砷化铟制成。美国的Huseyin Seren及其同事制造了这些材料,并注意到非线性半导体等离激元盘可用作光学限制器或饱和吸收器。该团队使用干法蚀刻制造了直径为70微米的六方砷化铟磁盘阵列。将样品掺杂到1017 cm-3的水平,导致0.8太赫兹的强烈等离子体响应。使用半导体作为等离子体介质的关键优势在于,掺杂水平可用于控制超材料的共振频率和其他特性。

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