GaN-on-Si Technology for High-power Transistors

摘要

Group-III nitride semiconductors are very promising materials for high-power electronic devices. The physical properties of these semiconductors make it possible to develop devices that show better performance than the silicon (Si)-based devices that are currently used for integrated circuits. In particular, replacing Si-based devices in inverters, which are widely used in home appliances, with gallium nitride (GaN)-based devices is an effective way to reduce electric power consumption in homes. In this article, a technique for forming GaN and related materials on Si substrates is introduced. This technique is suitable for low-cost mass production techniques because Si substrates have the largest size and lowest cost among various substrates.