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Thermal gating of charge currents with Coulomb coupled quantum dots

机译:库仑耦合量子点对充电电流的热门控

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We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), while the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge current by hot electrons.
机译:我们已经观察到热门控,即由热电子引起的静电门控。该效应发生在由两个电容耦合量子点组成的设备中。双点系统在一侧(QD1)耦合到热电子容器,同时监视第二点(QD2)的电导。当在QD2上施加偏压时,我们观察到电流很大程度上取决于储热器的温度。根据QD电平的相对能量对齐,可以增强或抑制此电流。因此,该系统可用于通过热电子来控制充电电流。

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