Investigation of CNTFET Performance with Drain Control Coefficient Effect

摘要

A deep study on the effects of drain control coefficient (α_D) on the performance of Carbon Nanotube Field Effect Transistor (CNTFET) has been conducted in this work. In this research, a new analytical CNTFET simulation along with a MATLAB multiple parameter approach model with 3D output has been employed to examine the device performance. It is found that- drain current, drain conductance and transconductance increase with high drain control coefficient causing the device to perform better. However, DIBL also increases with α_D resulting in degraded performance of the device. In addition, subthreshold swing moves away from the ideal value as α_D goes up which is also not desired for low threshold voltage and low-power operation of scaled down FETs.