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首页> 外文期刊>Nanoscale Research Letters >Spin Orbit Coupling Gap and Indirect Gap in Strain-Tuned Topological Insulator-Antimonene
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Spin Orbit Coupling Gap and Indirect Gap in Strain-Tuned Topological Insulator-Antimonene

机译:应变调谐拓扑绝缘体-锑中的自旋轨道耦合间隙和间接间隙

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摘要

Recently, searching large-bulk band gap topological insulator (TI) is under intensive study. Through k · P theory and first-principles calculations analysis on antimonene, we find that α -phase antimonene can be tuned to a 2D TI under an in-plane anisotropic strain and the magnitude of direct bulk band gap (SOC gap) depends on the strength of spin-orbit coupling (SOC) which is strain-dependent. As the band inversion of this TI accompanies with an indirect band gap, the TI bulk band gap is the indirect band gap, not the SOC gap. SOC gap can be enhanced by increasing strain, whereas the indirect band gap can be closed by increasing strain, such that large bulk band gap are forbidden. With the k · P theory analysis on antimonene, we know how to avoid such an indirect band gap. In case of indirect band gap avoided, the SOC gap could become the bulk band gap of a TI which can be enhanced by strain. Thus our theoretical analysis can help searching large bulk band gap TI.
机译:最近,正在研究大块带隙拓扑绝缘体(TI)。通过k·P理论和对锑的第一性原理分析,我们发现α相锑可以在面内各向异性应变下调谐至二维TI,而直接体带隙(SOC gap)的大小取决于自旋轨道耦合(SOC)的强度取决于应变。由于此TI的带反转伴随着间接带隙,因此TI大块隙是间接带隙,而不是SOC隙。 SOC间隙可以通过增加应变来增强,而间接带隙可以通过增加应变来封闭,从而禁止大的体带隙。通过对锑的k·P理论分析,我们知道如何避免这种间接的带隙。在避免间接带隙的情况下,SOC间隙可能成为TI的体带隙,可以通过应变来增强。因此,我们的理论分析可以帮助寻找大的体带隙TI。

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