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Spin- and Valley-Dependent Electronic Structure in Silicene Under Periodic Potentials

机译:周期电势下硅中自旋和谷基电子结构

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We study the spin- and valley-dependent energy band and transport property of silicene under a periodic potential, where both spin and valley degeneracies are lifted. It is found that the Dirac point, miniband, band gap, anisotropic velocity, and conductance strongly depend on the spin and valley indices. The extra Dirac points appear as the voltage potential increases, the critical values of which are different for electron with different spins and valleys. Interestingly, the velocity is greatly suppressed due to the electric field and exchange field, other than the gapless graphene. It is possible to achieve an excellent collimation effect for a specific spin near a specific valley. The spin- and valley-dependent band structure can be used to adjust the transport, and perfect transmissions are observed at Dirac points. Therefore, a remarkable spin and valley polarization is achieved which can be switched effectively by the structural parameters. Importantly, the spin and valley polarizations are greatly enhanced by the disorder of the periodic potential.
机译:我们研究了自旋和谷依赖的能带和在周期性电势下自旋和谷简并被提升的硅的输运性质。发现狄拉克点,微带,带隙,各向异性速度和电导在很大程度上取决于自旋和谷值。额外的狄拉克点随电压电位的增加而出现,其临界值对于具有不同自旋和谷值的电子而言是不同的。有趣的是,除了无间隙石墨烯以外,由于电场和交换场,速度被大大抑制。对于特定谷附近的特定自旋,可以实现优异的准直效果。依赖于自旋和谷的能带结构可用于调节输运,并且在狄拉克点观察到完美的透射。因此,实现了显着的自旋和波谷极化,可以通过结构参数有效地切换。重要的是,周期性势的无序极大地增强了自旋和谷极化。

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