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首页> 外文期刊>Nanoscale Research Letters >Measurement and Evaluation of Local Surface Temperature Induced by Irradiation of Nanoscaled or Microscaled Electron Beams
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Measurement and Evaluation of Local Surface Temperature Induced by Irradiation of Nanoscaled or Microscaled Electron Beams

机译:纳米级或微米级电子束辐照引起的局部表面温度的测量和评估

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Electron beams (e-beams) have been applied as detecting probes and clean energy sources in many applications. In this work, we investigated several approaches for measurement and estimation of the range and distribution of local temperatures on a subject surface under irradiation of nano-microscale e-beams. We showed that a high-intensity e-beam with current density of 10_(5-6)?A/cm_(2)could result in vaporization of solid Si and Au materials in seconds, with a local surface temperature higher than 3000?K. With a lower beam intensity to 10_(3-4)?A/cm_(2), e-beams could introduce local surface temperature in the range of 1000–2000?K shortly, causing local melting in metallic nanowires and Cr, Pt, and Pd thin films, and phase transition in metallic Mg-B films. We demonstrated that thin film thermocouples on a freestanding Si~(3)N~(4)window were capable of detecting peaked local surface temperatures up to 2000?K and stable, and temperatures in a lower range with a high precision. We discussed the distribution of surface temperatures under e-beams, thermal dissipation of thick substrate, and a small converting ratio from the high kinetic energy of e-beam to the surface heat. The results may offer some clues for novel applications of e-beams.
机译:电子束(电子束)已在许多应用中用作检测探针和清洁能源。在这项工作中,我们研究了在纳米微尺度电子束辐照下测量和估计对象表面局部温度的范围和分布的几种方法。我们表明,电流密度为10_(5-6)?A / cm_(2)的高强度电子束会导致固态Si和Au材料在几秒钟内汽化,局部表面温度高于3000?K 。当电子束强度降低到10_(3-4)?A / cm_(2)时,电子束可能会在短期内引入1000-2000?K范围内的局部表面温度,从而导致金属纳米线和Cr,Pt,和Pd薄膜,以及金属Mg-B薄膜的相变。我们证明了在独立的Si〜(3)N〜(4)窗口上的薄膜热电偶能够检测高达2000?K的峰值局部表面温度并且稳定,并且能够在较低的范围内高精度地检测温度。我们讨论了电子束下的表面温度分布,厚基板的散热以及从电子束的高动能到表面热的小转换率。该结果可能为电子束的新颖应用提供一些线索。

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