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Measurement and Evaluation of Local Surface Temperature Induced by Irradiation of Nanoscaled or Microscaled Electron Beams

机译:纳米级或微米级电子束辐照引起的局部表面温度的测量和评估

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摘要

Electron beams (e-beams) have been applied as detecting probes and clean energy sources in many applications. In this work, we investigated several approaches for measurement and estimation of the range and distribution of local temperatures on a subject surface under irradiation of nano-microscale e-beams. We showed that a high-intensity e-beam with current density of 105-6 A/cm2 could result in vaporization of solid Si and Au materials in seconds, with a local surface temperature higher than 3000 K. With a lower beam intensity to 103-4 A/cm2, e-beams could introduce local surface temperature in the range of 1000–2000 K shortly, causing local melting in metallic nanowires and Cr, Pt, and Pd thin films, and phase transition in metallic Mg-B films. We demonstrated that thin film thermocouples on a freestanding Si3N4 window were capable of detecting peaked local surface temperatures up to 2000 K and stable, and temperatures in a lower range with a high precision. We discussed the distribution of surface temperatures under e-beams, thermal dissipation of thick substrate, and a small converting ratio from the high kinetic energy of e-beam to the surface heat. The results may offer some clues for novel applications of e-beams.
机译:电子束(电子束)已在许多应用中用作检测探针和清洁能源。在这项工作中,我们研究了几种方法,用于在纳米微尺度电子束辐照下测量和估计对象表面局部温度的范围和分布。我们表明,电流密度为10 5-6 A / cm 2 的高强度电子束可能导致固体Si和Au材料在几秒钟内蒸发,电子束的局部表面温度高于3000 K.当光束强度降低到10 3-4 A / cm 2 时,电子束可能会引入局部温度范围为很快就会产生1000-2000 K,导致金属纳米线和Cr,Pt和Pd薄膜局部熔化,并导致金属Mg-B薄膜发生相变。我们证明了独立式Si3N4窗口上的薄膜热电偶能够检测高达2000K的峰值局部表面温度并保持稳定,并且能够以较低的精度检测较低范围内的温度。我们讨论了电子束下的表面温度分布,厚基板的散热以及从电子束的高动能到表面热的小转换率。该结果可能为电子束的新颖应用提供一些线索。

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