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首页> 外文期刊>Nanoscale Research Letters >Anomalous Inner-Gap Structure in Transport Characteristics of Superconducting Junctions with Degraded Interfaces
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Anomalous Inner-Gap Structure in Transport Characteristics of Superconducting Junctions with Degraded Interfaces

机译:界面退化的超导结输运特性的异常内间隙结构

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Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present or not as severe for traditional superconducting materials. In this work, we explain unexpected features in related transport characteristics as an effect of a degraded nanoscaled sheath at the superconductor surface. A model capturing the main aspects of the ballistic charge transport across hybrid superconducting structures with normally conducting nanometer-thick interlayers is proposed. The calculations are based on a scattering formalism taking into account Andreev electron-into-hole (and inverse) reflections at normal metal-superconductor interfaces as well as transmission and backscattering events in insulating barriers between the electrodes. Current-voltage characteristics of such devices exhibit a rich diversity of anomalous (from the viewpoint of the standard theory) features, in particular shift of differential-conductance maxima at gap voltages to lower positions and appearance of well-defined dips instead expected coherence peaks. We compare our results with related experimental data.
机译:用新型超导体对穿过隧道和断开结器件的电荷传输的定量描述遇到了一些问题,这些问题是传统超导材料所没有或没有的。在这项工作中,我们解释了相关的传输特性中的意外特征,这是超导体表面上降解的纳米级护套的影响。提出了一个模型,该模型捕获了具有正常导电纳米厚度中间层的混合超导结构之间弹道电荷传输的主要方面。该计算基于散射形式,其中考虑了正常金属-超导体界面处的安德列夫电子到空穴(和反向)反射以及电极之间绝缘势垒中的透射和反向散射事件。这种器件的电流-电压特性表现出丰富的异常特性(从标准理论的角度来看),特别是在间隙电压下差动电导最大值向较低位置的移动,以及出现明确定义的骤降,而不是预期的相干峰。我们将我们的结果与相关的实验数据进行比较。

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