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Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties

机译:在不同环境条件下制备的Ti掺杂ZnO薄膜:电子结构和磁性能

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We present a comprehensive study on Ti-doped ZnO thin films using X-ray Absorption Fine Structure (XAFS) spectroscopy. Ti K edge XAFS spectra were measured to study the electronic and chemical properties of Ti ions in the thin films grown under different ambient atmospheres. A strong dependence of Ti speciation, composition, and local structures upon the ambient conditions was observed. The XAFS results suggest a major tetrahedral coordination and a 4+ valence state. The sample grown in a mixture of 80% Ar and 20% O2 shows a portion of precipitates with higher coordination. A large distortion was observed by the Ti substitution in the ZnO lattice. Interestingly, the film prepared in 80% Ar, 20% O2 shows the largest saturation magnetic moment of 0.827 ± 0.013 µB/Ti.
机译:我们目前使用X射线吸收精细结构(XAFS)光谱对掺Ti的ZnO薄膜进行全面研究。测量Ti K边缘XAFS光谱以研究在不同环境气氛下生长的薄膜中Ti离子的电子和化学性质。观察到钛的形态,组成和局部结构对环境条件的强烈依赖性。 XAFS结果表明主要的四面体配位和4+价态。在80%Ar和20%O 2 的混合物中生长的样品显示出一部分具有较高配位的沉淀物。通过在ZnO晶格中进行Ti置换观察到较大的变形。有趣的是,在80%Ar,20%O 2 中制备的薄膜显示出最大的饱和磁矩为0.827±0.013 µ ​​ B / Ti。

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