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Evaluation of RF Heating due to Various Implants during MR Procedures

机译:在MR程序中评估由于各种植入物引起的RF加热

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We evaluated radiofrequency (RF) heating of various implants embedded in a gel phantom during magnetic resonance (MR) procedures. We examined the dependence of RF heating on variation in specific absorption rate (SAR) and angle between the implant and the static magnetic field ( B 0) and on the displacement of the phantom in the irradiation coil using a 1.5-tesla MR system, and we compared the influence of RF heating on the same implant using a 3.0T MR system. Our results support the occurrence of RF heating of implants made of non-magnetizing metal. We observed greater RF heating when the implant was set parallel to B 0, embedded at a shallower depth, and placed at the center of the RF irradiation coil. We also confirmed that the rise in temperature was proportionate to the increase in SAR. We considered the difference in temperature elevation on depth of embedding to reflect the skin-depth effect of RF intensity for both the 1.5- and 3.0-T MR systems.
机译:我们评估了在磁共振(MR)程序中嵌入凝胶体模中的各种植入物的射频(RF)加热。我们研究了射频加热对比吸收率(SAR)和植入物与静磁场之间的角度(B 0 )的变化以及幻影在辐照线圈中的位移的依赖性,使用1.5特斯拉MR系统,我们比较了使用3.0T MR系统的射频加热对同一植入物的影响。我们的结果支持由非磁性金属制成的植入物发生RF加热的情况。当植入物与B 0 平行放置,埋入较浅深度并置于RF辐射线圈的中心时,我们观察到更大的RF加热。我们还证实,温度升高与SAR升高成正比。我们考虑了温度升高在嵌入深度上的差异,以反映1.5-T和3.0-T MR系统的射频强度对皮肤深度的影响。

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