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Different strategies of stabilization of vanadium oxidation states in LaGaO3 nanocrystals

机译:LaGaO3纳米晶体中钒氧化态稳定的不同策略

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The spectroscopic properties of LaGaO3, doped with V ions, were examined in terms of the possibility of the stabilization of particular vanadium oxidation states. It was shown that three different approaches may be applied in order to control the ionic charge of vanadium, namely, charge compensation, via incorporation of Mg2+/Ca2+ ions, citric acid (CA)-assisted synthesis, with various CA concentrations and grain size tuning through annealing temperature regulation. Each of utilized method enables the significant reduction of V5+ emission band at 520 nm associated with the V4+→O2- CT transition in respect to the 2E→2T2 emission band of V4+ at 645 nm and 1E2→3T1g emission band of V3+ at 712 nm. The most efficient V oxidation state stabilization was obtained by the use of grain size modulation, which bases on fact of different localization of the V ions of given charge in the nanoparticles. Moreover the CA-assisted synthesis of LaGaO3:V determines V valence states but also provides significant separation of the nanograins. It was found that superior charge compensation was achieved when Mg2+ ions were introduced in the matrix, due the more efficient lability, resulting from the comparable ionic radii between Mg2+ and V ions.
机译:掺杂有V离子的LaGaO3的光谱特性是根据特定钒氧化态稳定的可能性来检查的。结果表明,可以采用三种不同的方法来控制钒的离子电荷,即通过掺入Mg2 + / Ca2 +离子,柠檬酸(CA)辅助合成,各种CA浓度和粒度调节来控制钒的离子补偿。通过退火温度调节。相对于645 nm的V4 +的2E→2T2发射带和712 nm的V3 +的1E2→3T1g发射带,每种使用的方法都能够显着减小与V4 +→O2- CT跃迁相关的520 nm处的V5 +发射带。通过使用粒径调节可获得最有效的V氧化态稳定化,这是基于给定电荷的V离子在纳米粒子中的不同定位这一事实。此外,CA辅助的LaGaO3:V合成决定了V价态,​​但也提供了纳米颗粒的显着分离。已经发现,由于Mg2 +和V离子之间可比的离子半径,使Mg2 +离子引入基质时,由于更有效的不稳定性,可以实现优异的电荷补偿。

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