An Amorphous Silicon Local Interconnection(ALSI) CMOS with Self-Aligned Source/Drain and Its Electrical Characteristics

摘要

A COMS device which has an extended heavily-doped amorphous silicon source/drain layer on the field oxide and an amorphous silicon local interconnection (ASLI) layer in the self-aligned source/drain region has been studied. The ASLI layer has some importa