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首页> 外文期刊>European Heart Journal - Case Reports >High-voltage impedance rise; mechanism and management in patients with transvenous implantable cardioverter-defibrillators: a case series
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High-voltage impedance rise; mechanism and management in patients with transvenous implantable cardioverter-defibrillators: a case series

机译:高压阻抗上升;静脉植入式心脏复律除颤器的治疗机制和治疗:一个病例系列

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Background We describe a case series of patients for a gradual rise in daily, low-voltage sub-threshold measurement (LVSM) of shock (high-voltage, HV) impedance in a group of patients with Boston Scientific implantable cardioverter-defibrillators (ICDs) and investigate the cause of the abnormality.Case summarySix patients presented with a gradual rise in HV impedance above normal range (132.5?±?20.8??). Patients were young with a mean age of 29?±?11?years, four patients had hypertrophic cardiomyopathy, one left ventricular non-compaction, and one long QT. All lead designs were silicon body with GORE polytetrafluoroethylene (ePTFE) coated coils, and a lower true shock impedance (TSI) was seen in all cases with full output synchronized shock. We compared the rate of HV impedance rise with our historical cohort of Boston ICDs using an unpaired t-test. The change in impedance per month was significantly higher amongst our six patients when compared with our cohort of Boston Scientific ICDs (3.2?±?1.9??/month vs. 0.0008?±?0.005??/month, P??0.001). Patients were individually investigated and management discussed in a dedicated device multi-disciplinary team meeting (MDT).DiscussionThere are distinct differences between TSI and LVSM. The TSI is derived from a full output shock, whilst LVSM is calculated from a small current output. These cases highlight the inaccuracies of the LVSM measurement. The gradual rise in LVSM is significantly higher than the value for TSI in these patients we propose the most likely mechanism is encapsulation fibrosis surrounding the right ventricular shock coil. Management for these patients requires vigorous testing to rule out electrical failure, and replacement maybe necessary.
机译:背景我们描述了一系列病例,这些患者在波士顿科学公司植入式心脏复律除颤器(ICD)患者组中的电击(高压,HV)阻抗的每日低压亚阈值测量(LVSM)逐渐升高病例总结六例患者的HV阻抗逐渐超过正常范围(132.5?±?20.8?)。患者年轻,平均年龄为29±11岁,4例患有肥厚型心肌病,1例左心室不致密实,1例QT较长。所有引线设计均为带有GORE聚四氟乙烯(ePTFE)涂层线圈的硅主体,在所有情况下,在全输出同步冲击下,都可以看到较低的真实冲击阻抗(TSI)。我们使用不成对的t检验将HV阻抗上升的速率与我们历史上的波士顿ICD队列进行了比较。与我们的Boston Scientific ICD队列相比,在这6名患者中,每月阻抗的变化显着更高(3.2?±?1.9?/月与0.0008?±?0.005?/月,P?<?0.001)。 。在专门的设备多学科团队会议(MDT)上对患者进行了单独调查并讨论了治疗方法。讨论TSI和LVSM之间存在明显差异。 TSI来自全输出冲击,而LVSM由小电流输出计算得出。这些情况突出了LVSM测量的不准确性。在这些患者中,LVSM的逐渐升高明显高于TSI的升高,我们认为最可能的机制是右心室电击线圈周围的包膜纤维化。对这些患者的管理需要严格的测试以排除电气故障,并且可能需要更换。

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