Tunnel Magnetoresistance ofFe3O4/MgO/Fe Nanostructures

摘要

A magnetic tunnel junction Fe3O4/MgO/Fe with (001) layer orientation is considered. The junction magnetic energy is analyzed as a function of the angle between the layer magnetization vectors under various magnetic fields. The tunnel magnetoresistance is calculated as a function ofthe external magnetic field. In contrast with junctions with unidirectional anisotropy, a substantially lower magnetic field is required for the junction switching.