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Atomic Layer Deposition of Lithium Fluoride Optical Coatings for the Ultraviolet

机译:用于紫外线的氟化锂光学镀膜的原子层沉积

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Lithium fluoride is an important material for ultraviolet optical systems, possessing among the largest optical bandgaps of dielectric materials. We report on the development of an atomic layer deposition (ALD) process for lithium fluoride that is capable of depositing thin films in a self-limiting manner, with an approximate deposition rate of approximately 0.15 ? per ALD cycle at a substrate temperature of 150 °C. Films are characterized by spectroscopic ellipsometry, atomic force microscopy, X-ray photoelectron spectroscopy, and far ultraviolet reflectometry. For substrate temperatures of 150 °C and greater, films showed significant microroughness with a correlated reduction in effective refractive index. This behavior was mitigated by a reduction in substrate temperature to as low as 100 °C. Films deposited on silicon substrates were subjected to long-term storage testing to evaluate the environmental sensitivity of the deposited layers. Protected aluminum mirrors were also fabricated with ALD LiF overcoats, yielding a reflectance of 84% at a wavelength of 125 nm. The performance relative to state-of-the-art LiF thin films deposited by physical vapor deposition methods is discussed, along with the prospects for future optimization.
机译:氟化锂是用于紫外线光学系统的重要材料,在介电材料的最大光学带隙中占有一席之地。我们报道了氟化锂的原子层沉积(ALD)工艺的发展,该工艺能够以自限方式沉积薄膜,其沉积速率约为0.15?基板温度为150°C时,每个ALD循环进行。膜的特征在于椭圆偏振光谱法,原子力显微镜法,X射线光电子能谱法和远紫外反射法。对于150°C或更高的基材温度,薄膜显示出明显的微粗糙度,同时有效折射率也随之降低。通过将基板温度降低至100°C,可以缓解这种情况。沉积在硅基板上的薄膜经过长期存储测试,以评估沉积层的环境敏感性。还使用ALD LiF外涂层制造了受保护的铝镜,在125 nm的波长下反射率为84%。讨论了相对于通过物理气相沉积方法沉积的最新LiF薄膜的性能,以及未来优化的前景。

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