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首页> 外文期刊>International Journal of Photoenergy >New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency
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New Architecture towards Ultrathin CdTe Solar Cells for High Conversion Efficiency

机译:超薄CdTe太阳能电池的新架构,可实现高转换效率

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摘要

Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D) is used to investigate the possibility of realizing ultrathin CdTe based solar cells with high and stable conversion efficiency. In the first step, we modified the conventional cell structure by substituting the CdS window layer with a CdS:O film having a wide band gap ranging from 2.42 to 3.17 eV. Thereafter, we simulated the quantum efficiency, as well as the parameters ofJ-Vcharacteristics, and showed how the thickness of CdS:O layer influences output parameters of Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/Ni reference cell. High conversion efficiency of 17.30% has been found using CdTe1-xSx(x=0.12) and CdTe layers of thickness 15 nm and 4 μm, respectively. Secondly, we introduced a BSR layer between the absorber layer and back metal contact, which led to Glass/SnO2/ZTO/CdS:O/CdTe1-xSx/CdTe/BSR/Ni configuration. We found that a few nanometers (about 5 nm) of CdTe1-xSxlayer is sufficient to obtain high conversion efficiency. For BSR layer, different materials with large band gap, such as ZnTe, Cu2Te, and p+-CdTe, have been used in order to reduce minority carrier recombination at the back contact. When ZnTe is used, high conversion efficiency of 21.65% and better stability are obtained, compared to other BSR.
机译:使用一维太阳能电池电容模拟器(SCAPS-1D)来研究实现具有高且稳定转换效率的基于CdTe的超薄太阳能电池的可能性。在第一步中,我们用CdS:O膜代替CdS窗口层,从而改变了常规的电池结构,该CdS:O膜的带隙范围为2.42至3.17 eV。此后,我们模拟了量子效率以及J-V特性的参数,并显示了CdS:O层的厚度如何影响Glass / SnO2 / ZTO / CdS:O / CdTe1-xSx / CdTe / Ni参考电池的输出参数。使用厚度分别为15 nm和4μm的CdTe1-xSx(x = 0.12)和CdTe层,发现转换效率高达17.30%。其次,我们在吸收层和背面金属接触层之间引入了BSR层,从而形成了Glass / SnO2 / ZTO / CdS:O / CdTe1-xSx / CdTe / BSR / Ni配置。我们发现几纳米(约5 nm)的CdTe1-xSxlayer足以获得高转换效率。对于BSR层,已使用带隙较大的其他材料(例如ZnTe,Cu2Te和p + -CdTe)来减少背面接触时的少数载流子复合。与其他BSR相比,当使用ZnTe时,可获得21.65%的高转换效率和更好的稳定性。

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