Multisim Design and Simulation of 2.2GHz LNA for Wireless Communication

摘要

This paper presents the work done on the design and simulation of a high frequency low noise amplifier forwireless communication. The purpose of the amplifier is to amplify the received RF path of a wirelessnetwork. With high gain, high sensitivity and low noise using Bipolar Junction transistor (BJT). The designmethodology requires analysis of the transistor for stability, proper matching, network selection andfabrication. The BJT transistor was chosen for the design of the LNA due to its low noise and good gain athigh frequency. These properties were confirmed using some measurement techniques including NetworkAnalyzer, frequency analyzer Probe and Oscilloscope for the simulation and practical testing of theamplifier to verify the performance of the designed High frequency Low noise amplifier. The design goalsof noise figure of 0.52dB-0.7dB and bias conditions are Vcc = 3.5 V and Icc= 55 mA to produce 16.8 dBgain across the 0.4–2.2GHz band.