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Characterization of cadmium sulphide (CdS) thin film deposited by spray pyrolysis technique

机译:喷雾热解技术沉积的硫化镉(CdS)薄膜的表征

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Cadmium sulphide thin film is deposited on the glass slide using aqueous solution of cadmium chloride and thiourea by using spray pyrolysis deposition technique at temperature of 400 0 C. Structural, optical and electrical properties of deposited CdS thin film are investigated. Optical studied of CdS thin film is characterized by using UV –Visible Spectrophotometer in the visible region (380 – 1000 nm). The energy Band gap of CdS thin film is obtained in the present work at 2.3 eV. Thickness of CdS thin film is determined by using weight difference density method. Absorption coefficient and extinction coefficient of CdS thin film are studied in the present work. Structural characterization of CdS thin is done by using X-Ray diffractometer. XRD Pattern analysis showed that the CdS thin film is mixed phases of cubic and hexagonal structure. Using four probe methods the electrical resistivity and electrical conductivity of CdS thin film are studied.
机译:在400 0 C的温度下,采用喷雾热解沉积技术,使用氯化镉和硫脲的水溶液将硫化镉薄膜沉积在载玻片上。研究了沉积的CdS薄膜的结构,光学和电学性质。对CdS薄膜的光学研究是通过在可见光区域(380 – 1000 nm)中使用紫外可见分光光度计进行的。在目前的工作中,CdS薄膜的能带隙为2.3 eV。 CdS薄膜的厚度通过重量差密度法确定。研究了CdS薄膜的吸收系数和消光系数。使用X射线衍射仪对CdS薄膜进行结构表征。 XRD图谱分析表明,CdS薄膜是立方和六方结构的混合相。使用四种探针方法研究了CdS薄膜的电阻率和电导率。

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