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首页> 外文期刊>International Journal of Modern Physics: Conference Series >Semi-insulating GaAs detectors with HDPE layer for detection of fast neutrons from D–T nuclear reaction
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Semi-insulating GaAs detectors with HDPE layer for detection of fast neutrons from D–T nuclear reaction

机译:具有HDPE层的半绝缘GaAs探测器,用于探测D–T核反应中的快中子

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Bulk semi-insulating (SI) GaAs detectors optimized for fast-neutron detection were examined using mono-energetic neutrons. The detectors have an active area of 7.36 mm~(2) defined by a multi-pixel structure of a AuZn Schottky contact allowing a relatively high breakdown voltage (300 V) sufficient for full depletion of the detector structure. The Schottky contact is covered by a HDPE (high density polyethylene) conversion layer, where neutrons transfer their kinetic energy to hydrogen atoms through elastic nuclear collisions. The detectors were exposed to mono-energetic neutrons generated by a deuterium (D)–tritium (T) nuclear reaction at a Van de Graaff accelerator. Neutrons reached a kinetic energy of 16.8 MeV when deuterons were accelerated by 1 MV potential. The influence of the HDPE layer thickness on the detection efficiency of the fast neutrons was studied. The thickness of the conversion layer varied from 50 μ m to 1300 μ m. The increase of the HDPE layer thickness led to a higher detection efficiency due to higher conversion efficiency of the HDPE layer. The effect of the active detector thickness modified by the detector reverse bias voltage on the detection efficiency was also evaluated. By increasing the detector reverse voltage, the detector active volume expands to the depth and also to the sides, slightly increasing the neutron detection efficiency.
机译:使用单能中子检查了为快速中子检测而优化的体半绝缘(SI)GaAs探测器。检测器的有效面积为7.36 mm(2),由AuZn肖特基接触的多像素结构定义,允许相对较高的击穿电压(300 V),足以完全耗尽检测器结构。肖特基接触被HDPE(高密度聚乙烯)转换层覆盖,中子通过弹性核碰撞将动能转移到氢原子上。探测器在Van de Graaff加速器上暴露于氘(D)-tri(T)核反应产生的单能中子。当氘核以1 MV电位加速时,中子达到16.8 MeV的动能。研究了HDPE层厚度对快中子探测效率的影响。转换层的厚度在50μm至1300μm之间变化。 HDPE层厚度的增加由于HDPE层的较高转换效率而导致较高的检测效率。还评估了由检测器反向偏置电压修改的有源检测器厚度对检测效率的影响。通过增加探测器的反向电压,探测器的有效体积扩展到深度以及侧面,从而稍微提高中子的探测效率。

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